Si Diode Detectors
El-Mul has introduced to the SEM market a novel Si diode technology that enables BSE imaging at very low beam energies.

Whereas conventional BSE detectors are limited to backscattered electrons down to ca. 4keV, our BSED diode produces an image even with 1 keV BSE.

Responsivity measurements show a significant performance difference between El-Mul's diode and other conventional BSED diodes at beam energies of less than 5 keV.
Responsivity = Idiode / (Iprimary beam x Eprimary beam)

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